IRFB4710 FB4710 Mosfet มอสเฟต ยี่ห้อ IR
Type Designator: IRFB4710
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 75 A
Total Gate Charge (Qg): 110 nC
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: TO220AB